Journal Title:Ieee Transactions On Device And Materials Reliability
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
出版物的范圍包括但不限于以下方面的可靠性:設(shè)備、材料、工藝、接口、集成微系統(tǒng)(包括 MEMS 和傳感器)、晶體管、技術(shù)(CMOS、BiCMOS 等)、集成電路(IC、SSI、MSI、LSI、ULSI、ELSI 等)、薄膜晶體管應(yīng)用。從概念階段到研發(fā)再到制造規(guī)模,在每個(gè)階段對這些實(shí)體的可靠性進(jìn)行測量和理解,為成功將產(chǎn)品推向市場提供了設(shè)備、材料、工藝、封裝和其他必需品的可靠性的整體數(shù)據(jù)庫。這個(gè)可靠性數(shù)據(jù)庫是滿足客戶期望的優(yōu)質(zhì)產(chǎn)品的基礎(chǔ)。這樣開發(fā)的產(chǎn)品具有高可靠性。高質(zhì)量將實(shí)現(xiàn),因?yàn)楫a(chǎn)品弱點(diǎn)將被發(fā)現(xiàn)(根本原因分析)并在最終產(chǎn)品中設(shè)計(jì)出來。這個(gè)不斷提高可靠性和質(zhì)量的過程將產(chǎn)生卓越的產(chǎn)品。歸根結(jié)底,可靠性和質(zhì)量不是一回事;但從某種意義上說,我們可以做或必須做一切事情來保證產(chǎn)品在客戶條件下在現(xiàn)場成功運(yùn)行。我們的目標(biāo)是抓住這些進(jìn)步。另一個(gè)目標(biāo)是關(guān)注電子材料和設(shè)備可靠性的最新進(jìn)展,并提供對影響可靠性的基本現(xiàn)象的基本理解。此外,該出版物還是可靠性跨學(xué)科研究的論壇??傮w目標(biāo)是提供前沿/最新信息,這些信息與可靠產(chǎn)品的創(chuàng)造至關(guān)重要。
Ieee Transactions On Device And Materials Reliability創(chuàng)刊于2001年,由Institute of Electrical and Electronics Engineers Inc.出版商出版,收稿方向涵蓋工程技術(shù) - 工程:電子與電氣全領(lǐng)域,此刊是中等級別的SCI期刊,所以過審相對來講不是特別難,但是該刊專業(yè)認(rèn)可度不錯(cuò),仍然是一本值得選擇的SCI期刊 。平均審稿速度 較慢,6-12周 ,影響因子指數(shù)2.5,該期刊近期沒有被列入國際期刊預(yù)警名單,廣大學(xué)者值得一試。
大類學(xué)科 | 分區(qū) | 小類學(xué)科 | 分區(qū) | Top期刊 | 綜述期刊 |
工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 | 3區(qū) 3區(qū) | 否 | 否 |
名詞解釋:
中科院分區(qū)也叫中科院JCR分區(qū),基礎(chǔ)版分為13個(gè)大類學(xué)科,然后按照各類期刊影響因子分別將每個(gè)類別分為四個(gè)區(qū),影響因子5%為1區(qū),6%-20%為2區(qū),21%-50%為3區(qū),其余為4區(qū)。
大類學(xué)科 | 分區(qū) | 小類學(xué)科 | 分區(qū) | Top期刊 | 綜述期刊 |
工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 | 3區(qū) 3區(qū) | 否 | 否 |
大類學(xué)科 | 分區(qū) | 小類學(xué)科 | 分區(qū) | Top期刊 | 綜述期刊 |
工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 | 3區(qū) 3區(qū) | 否 | 否 |
大類學(xué)科 | 分區(qū) | 小類學(xué)科 | 分區(qū) | Top期刊 | 綜述期刊 |
工程技術(shù) | 4區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 | 4區(qū) 4區(qū) | 否 | 否 |
大類學(xué)科 | 分區(qū) | 小類學(xué)科 | 分區(qū) | Top期刊 | 綜述期刊 |
工程技術(shù) | 3區(qū) | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 PHYSICS, APPLIED 物理:應(yīng)用 | 3區(qū) 3區(qū) | 否 | 否 |
大類學(xué)科 | 分區(qū) | 小類學(xué)科 | 分區(qū) | Top期刊 | 綜述期刊 |
工程技術(shù) | 3區(qū) | PHYSICS, APPLIED 物理:應(yīng)用 ENGINEERING, ELECTRICAL & ELECTRONIC 工程:電子與電氣 | 3區(qū) 4區(qū) | 否 | 否 |
按JIF指標(biāo)學(xué)科分區(qū) | 收錄子集 | 分區(qū) | 排名 | 百分位 |
學(xué)科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q2 | 165 / 352 |
53.3% |
學(xué)科:PHYSICS, APPLIED | SCIE | Q2 | 87 / 179 |
51.7% |
按JCI指標(biāo)學(xué)科分區(qū) | 收錄子集 | 分區(qū) | 排名 | 百分位 |
學(xué)科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q3 | 186 / 354 |
47.6% |
學(xué)科:PHYSICS, APPLIED | SCIE | Q3 | 99 / 179 |
44.97% |
名詞解釋:
WOS即Web of Science,是全球獲取學(xué)術(shù)信息的重要數(shù)據(jù)庫,Web of Science包括自然科學(xué)、社會(huì)科學(xué)、藝術(shù)與人文領(lǐng)域的信息,來自全世界近9,000種最負(fù)盛名的高影響力研究期刊及12,000多種學(xué)術(shù)會(huì)議多學(xué)科內(nèi)容。給期刊分區(qū)時(shí)會(huì)按照某一個(gè)學(xué)科領(lǐng)域劃分,根據(jù)這一學(xué)科所有按照影響因子數(shù)值降序排名,然后平均分成4等份,期刊影響因子值高的就會(huì)在高分區(qū)中,最后的劃分結(jié)果分別是Q1,Q2,Q3,Q4,Q1代表質(zhì)量最高。
CiteScore | SJR | SNIP | CiteScore排名 | ||||||||||||||||
4.8 | 0.436 | 1.148 |
|
名詞解釋:
CiteScore:衡量期刊所發(fā)表文獻(xiàn)的平均受引用次數(shù)。
SJR:SCImago 期刊等級衡量經(jīng)過加權(quán)后的期刊受引用次數(shù)。引用次數(shù)的加權(quán)值由施引期刊的學(xué)科領(lǐng)域和聲望 (SJR) 決定。
SNIP:每篇文章中來源出版物的標(biāo)準(zhǔn)化影響將實(shí)際受引用情況對照期刊所屬學(xué)科領(lǐng)域中預(yù)期的受引用情況進(jìn)行衡量。
是否OA開放訪問: | h-index: | 年文章數(shù): |
未開放 | 63 | 72 |
Gold OA文章占比: | 2021-2022最新影響因子(數(shù)據(jù)來源于搜索引擎): | 開源占比(OA被引用占比): |
24.52% | 2.5 | 0.05... |
研究類文章占比:文章 ÷(文章 + 綜述) | 期刊收錄: | 中科院《國際期刊預(yù)警名單(試行)》名單: |
97.22% | SCIE | 否 |
歷年IF值(影響因子):
歷年引文指標(biāo)和發(fā)文量:
歷年中科院JCR大類分區(qū)數(shù)據(jù):
歷年自引數(shù)據(jù):
2023-2024國家/地區(qū)發(fā)文量統(tǒng)計(jì):
國家/地區(qū) | 數(shù)量 |
USA | 52 |
CHINA MAINLAND | 51 |
India | 50 |
Taiwan | 35 |
France | 20 |
Italy | 18 |
Belgium | 15 |
Austria | 14 |
Japan | 13 |
GERMANY (FED REP GER) | 12 |
2023-2024機(jī)構(gòu)發(fā)文量統(tǒng)計(jì):
機(jī)構(gòu) | 數(shù)量 |
INDIAN INSTITUTE OF TECHNOLOGY S... | 23 |
IMEC | 15 |
CENTRE NATIONAL DE LA RECHERCHE ... | 14 |
STMICROELECTRONICS | 10 |
TECHNISCHE UNIVERSITAT WIEN | 9 |
NATIONAL TSING HUA UNIVERSITY | 8 |
NATIONAL YANG MING CHIAO TUNG UN... | 8 |
COMMUNAUTE UNIVERSITE GRENOBLE A... | 7 |
GLOBALFOUNDRIES | 7 |
CHINESE ACADEMY OF SCIENCES | 6 |
近年引用統(tǒng)計(jì):
期刊名稱 | 數(shù)量 |
IEEE T ELECTRON DEV | 167 |
IEEE T NUCL SCI | 116 |
MICROELECTRON RELIAB | 100 |
IEEE T DEVICE MAT RE | 93 |
IEEE ELECTR DEVICE L | 69 |
APPL PHYS LETT | 59 |
J APPL PHYS | 44 |
IEEE T COMP PACK MAN | 24 |
IEEE J SOLID-ST CIRC | 23 |
IEEE T POWER ELECTR | 23 |
近年被引用統(tǒng)計(jì):
期刊名稱 | 數(shù)量 |
IEEE T ELECTRON DEV | 127 |
IEEE T DEVICE MAT RE | 93 |
MICROELECTRON RELIAB | 88 |
IEEE ACCESS | 47 |
IEEE T NUCL SCI | 37 |
IEEE ELECTR DEVICE L | 36 |
IEICE ELECTRON EXPR | 35 |
IEEE T POWER ELECTR | 31 |
J MATER SCI-MATER EL | 31 |
ELECTRONICS-SWITZ | 30 |
近年文章引用統(tǒng)計(jì):
文章名稱 | 數(shù)量 |
A First-Principles Study of the ... | 23 |
Understanding BTI in SiC MOSFETs... | 9 |
Comparative Thermal and Structur... | 9 |
Output-Power Enhancement for Hot... | 8 |
Rapid Solder Interconnect Fatigu... | 7 |
Study of Long Term Drift of Alum... | 7 |
Impacts of Process and Temperatu... | 6 |
Comparative Study of Reliability... | 6 |
A Compact and Self-Isolated Dual... | 6 |
A Review on Hot-Carrier-Induced ... | 6 |
同小類學(xué)科的其他優(yōu)質(zhì)期刊 | 影響因子 | 中科院分區(qū) |
International Journal Of Ventilation | 1.1 | 4區(qū) |
Journal Of Environmental Chemical Engineering | 7.4 | 2區(qū) |
Journal Of Energy Storage | 8.9 | 2區(qū) |
Complexity | 1.7 | 4區(qū) |
Chemical Engineering Journal | 13.3 | 1區(qū) |
International Journal Of Hydrogen Energy | 8.1 | 2區(qū) |
Aerospace | 2.1 | 3區(qū) |
Electronics | 2.6 | 3區(qū) |
Shock Waves | 1.7 | 4區(qū) |
Buildings | 3.1 | 3區(qū) |
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