Journal Title：Journal Of Crystal Growth

The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.

該期刊為從事晶體生長實驗和理論方面研究及其應(yīng)用（例如在設(shè)備中）的工作者提供了通用的參考和出版資源。以下領(lǐng)域的實驗和理論貢獻均已發(fā)表：成核和生長理論、分子動力學(xué)和傳輸現(xiàn)象、聚合物和玻璃等粘性介質(zhì)中的結(jié)晶；金屬、礦物、半導(dǎo)體、超導(dǎo)體、磁性材料、無機、有機和生物物質(zhì)的塊體或薄膜晶體生長；分子束外延、化學(xué)氣相沉積、III-V 和 II-VI 以及其他半導(dǎo)體的生長；通過物理和化學(xué)方法表征單晶；晶體生長的裝置、儀器和技術(shù)以及凈化方法；多層異質(zhì)結(jié)構(gòu)及其表征，重點是電子材料的晶體生長和外延方面。該期刊的一大特色是定期收錄有關(guān)晶體生長相關(guān)方面的研討會和會議論文集。

Journal Of Crystal Growth創(chuàng)刊于1967年，由Elsevier出版商出版，收稿方向涵蓋化學(xué) - 晶體學(xué)全領(lǐng)域，此期刊水平偏中等偏靠后，在所屬細(xì)分領(lǐng)域中專業(yè)影響力一般，過審相對較易，如果您文章質(zhì)量佳，選擇此期刊，發(fā)表機率較高。平均審稿速度 約2.6個月 約10周，影響因子指數(shù)1.7，該期刊近期沒有被列入國際期刊預(yù)警名單，廣大學(xué)者值得一試。